摘要
High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.
High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.
基金
This work was supported by the National Natural Science Foundation of China （Nos. 21322106, 51472097 and 51402114）, National Basic Research Program of China （No. 2015CB932600）, Program for HUST Inter- disciplinary Innovation Team （No. 2015ZDTD038） and the Fundamental Research Funds for the Central Uni- versities. The authors thank the Analytical and Testing Centre of Huazhong University of Science and Tech- nology.
