期刊文献+

并发双频段低噪声放大器的设计与仿真

Design and Simulation of Concurrent Dual Band Low Noise Amplifier
下载PDF
导出
摘要 针对低噪声放大器(LNA)工作频段单一的问题,提出一种以新型匹配结构为基础的并发双频段LNA设计方法。首先将两频点的输入输出阻抗利用串联微带线变换到等电导圆上;再通过在匹配频点处阻抗等效为所需要电纳,同时在另一个频点等效为开路的特定并联微带线枝节将两频点同时匹配到50Ω。最后基于这种匹配结构对适用于WIFI(2.4GHz)、LTE-Hi(3.5GHz)[1]的双频点三级LNA进行了设计与仿真。仿真结果表明,三级级联LNA在这两个频段噪声系数均小于1d B;增益大于40d B;输入输出回波损耗均大于20d B,能同时稳定工作在两个频段。 Aiming at the problem of operating band single in low noise amplifier( LNA). A design method of concurrent dual band LNA based on a novel matching structure is proposed. First two frequency of input and output impedance using series microstrip transform to conductance circle; and then through the frequency equivalent impedance matching to the susceptance,and in another frequency equivalent open circuit specific parallel microstrip stub to the frequency and matched to 50 ohms. Finally,the design and Simulation of WIFI( 2. 4GHz) LTE-Hi( 3. 5GHz)[1]single stage and three stage LNA are carried out based on the matching structure. The simulation results show that the noise figure of the three stage cascade LNA is less than 1d B,the gain is greater than 40 d B,and the input and output return loss is greater than 20 d B,and it can work stably at two frequency bands simultaneously.
作者 龙丹桂 文化锋 陈珊 LONG Dan-gui WEN Hua-feng CHEN Shan(Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China)
出处 《无线通信技术》 2016年第4期12-16,共5页 Wireless Communication Technology
基金 国家自然科学基金项目(61571251) 浙江省公益技术应用研究项目(2015C34004) 宁波市自然科学基金(2015A610116)
关键词 双频段 阻抗匹配 低噪声放大器 微带传输线 dual band impedance matching low noise amplifier microstrip transmission line
  • 相关文献

参考文献8

二级参考文献67

  • 1庄奕琪,孙青,侯询.电子器件低频噪声谱成分的全参数优化分析[J].计量学报,1996,17(2):136-141. 被引量:7
  • 2殷吉辉,杨华中.一种双频段CMOS低噪声放大器[J].微电子学,2007,37(3):403-406. 被引量:5
  • 3Naveed Ahsan, Aziz Ouachal, Jerzy Dabrowski, et al. Dual band tunable LNA for flexible RF front end [C]. Proceedings of International Conference on Applied Sciences & Technology, Islamabad, Pakistan, 2007: 19-22.
  • 4Li Zhenbiao, Quintal Richard, Kenneth K O. A dualband CMOS front-end with two gain modes for wireless LAN applications [J]. IEEE Journal of Solidstate Circuits, 2004,39(11) :2069-2073.
  • 5Lu Lianghung, Hsieh Hsiehhung, Wang Yushun. A compact 2.4/5.2 GHz CMOS dual-band low-noise amplifier[J]. IEEE Microwave and Wireless Components Letters,2005,15(10) :685-687.
  • 6Dao Vu Kien, Choi Byoung Gun, Park Chul Soon. A dual-band CMOS RF front-end for 2.4/5.2 GHz applications [C]. Proceedings of International Conference on Applied Sciences & Technology, 2007: 145- 148.
  • 7Li Weichang, Wang Chaoshiun, Wang Chorngkuang. A 2.4 GHz/3.5 GHz/5 GHz multi-band LNA with complementary switched capacitor multi-tap inductor in 0.18 μm CMOS [C]. IEEE APMC Proceedings, 2006 : 1-4.
  • 8Hashemi Hossein, Hajimiri All. Concurrent muhiband low-noise amplifiers-theory, design, and applications [J]. IEEE Transcations on Microwave and techniques, 2002,50 (1) : 288-301.
  • 9Tzeng Fred, Jahanian Amin, Heydari Payam. A multiband inductor-reuse CMOS low-noise amplifier [J]. IEEE Transactions on Circuits and Systems, 2008,55(3) :209-213.
  • 10Goo Jungsuk, Ahn Heetea, Ladwig Donald i, et al. A noise optimization technique for integrated low-noise amplifiers [J]. IEEE Journal of Solid State Circuits, 2002,37 (8):994-1002.

共引文献27

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部