摘要
基于通信对功率放大器的宽带和高效率的需求,给出了一款C波段GaN HEMT内匹配功率放大器的设计过程。该器件由2个3 mm栅宽的GaN功率管芯和制作在Al_2O_3陶瓷基片上的输入输出匹配电路组成。通过调节键合丝和电容,实现了功率放大器在4.4~5.0 GHz,5.2~5.9 GHz和6.0~6.6 GHz三个典型工程应用频段的设计,功放在这3个典型工程应用频段内输出功率均大于43 d Bm(20 W),附加效率大于60%,功率增益大于10 d B,充分显示了GaN功率器件宽带、高效率的工作性能。
Based on the requirement of broadband and high efficiency of power amplifier, this paper presents the design process of a C-band GaN HEMT internally-matched power amplifier.The device is composed of two 3 mm gate width GaN HEMT dies and the input and output matching circuit on the Al2O3 ceramic substrate. The design of power amplifier in the three typical engineering application frequency bands of 4.4-5.0 GHz ,5.2-5.9 GHz and 6.0- 6.6 GHz is realized by adjusting the bond wires and capacitances. In these typical engineering application frequency bands,the power amplifier output power is more than 43 dBm （20 W） , the power added efficiency is greater than 60% ,and the power gain is greater than l0 dB.It fully shows the work performance of the GaN power amplifier with wide bandwidth and high efficiency.
作者
徐涛
唐厚鹭
王昭笔
曹欢欢
XU Tao TANG Hou-lu WANG Zhao-bi CAO Huan-huan(Institute of Physical Electronics, University of Electronic Science and Technology of China, Chengdu Sichuan 610000, China The 13th Research Institute of CETC, Shijiazhuang Hebei 050051, China)
出处
《无线电工程》
2017年第3期54-57,共4页
Radio Engineering
