摘要
为了得到双极型晶体管在高频电磁波作用下的效应机理,运用改进的二维半导体器件仿真程序,对双极型晶体管在电磁脉冲作用下的瞬态响应特性进行了仿真分析,研究了高频电磁波注入位置不同所造成的不同响应特性,分析了干扰电磁波频率以及电压幅度对于器件失效和烧毁的影响,并从理论上解释了热斑形成原因和失效电压拐点存在原理,为舰载高功率微波的发展应用提供一定的参考价值。
In order to obtain the effect mechanism of bipolar transistor under the action of electromagnetic pulse,the transient response characteristics of are simulated by the improved two-dimensional semiconductor device simulation program.The different response characteristics caused by different electromagnetic injection positions,and the influence of electromagnetic wave frequency and voltage amplitude on the failure and burnout of the device was analyzed.The reason of the inflexion point of the voltage failure was explained theoretically.This research can provide some reference value for the development and application of carrier high power microwave.
出处
《舰船电子工程》
2017年第2期135-139,共5页
Ship Electronic Engineering
基金
国家863高技术发展计划项目
国家自然科学基金项目(编号:61201056
61271104)资助
关键词
超宽带脉冲
低噪声放大器
毁伤效应
脉冲参数
ultra-wideband pulses
low-noise amplifier
damage effect
pulse parameters
