摘要
The intrinsic a-Si：H passivation layer inserted between the doped a-Si：H layer and the c-Si substrate is very crucial for improving the performance of the a-Si：H/c- Si heterojunction （SHJ） solar cell. The passivation performance of the a-Si：H layer is strongly dependent on its microstructure. Usually, the compact a-Si：H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition （PECVD） can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si：H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a- Si：H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation perfor- mance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si：H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si：H layer microstructure was further investigated by Raman and Fourier transform infrared （FTIR） spectro-scopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si：H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the opencircuit voltage （Voc） of up to 0.732 V.
The intrinsic a-Si：H passivation layer inserted between the doped a-Si：H layer and the c-Si substrate is very crucial for improving the performance of the a-Si：H/c- Si heterojunction （SHJ） solar cell. The passivation performance of the a-Si：H layer is strongly dependent on its microstructure. Usually, the compact a-Si：H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition （PECVD） can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si：H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a- Si：H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation perfor- mance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si：H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si：H layer microstructure was further investigated by Raman and Fourier transform infrared （FTIR） spectro-scopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si：H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the opencircuit voltage （Voc） of up to 0.732 V.
基金
Acknowledgements This work was supported by the National High Technology Research and Development Program of China （863 Program） （Grant No. 2011AA050502） and the National Natural Science Foundation of China （Grant No. 61274061）.
