摘要
对LED正向压降随温度变化的机理进行理论分析,并在1~400 mA范围内对GaN材料的1 W大功率LED正向电压随温度的变化关系进行了试验研究。发现P型欧姆接触电阻小的芯片,其变化关系是线性的;P型欧姆接触电阻大的芯片,在大电流(200 mA以上)条件下,且温度达到120℃时,其变化关系发生改变,系数由负变为正。本文得到的试验结果对实际应用有指导意义。
In this paper, the mechanism of forward voltage drop variation with temperature in LED is theoretically analyzed, and experiment is conducted on 1 W high-power GaN LEDs in the current range of lmA to 400mA. The results show that in the case of chips with low P-type Ohmic contact resistance, the variation stays linear. However, the relation of voltage drop and temperature changes on the chips with high P-type Ohmic contact resistance. The coefficient turns negative from positive under high current （above 200 mA） and temperature up to 120℃. The experiment conclusion of this paper has instructive significance in practical application.
出处
《中国照明电器》
2017年第1期14-17,共4页
China Light & Lighting
关键词
大功率LED
正向电压
正向电流
温度
结温
热阻
high-power LED
forward voltage
forward current
temperature
junction temperature
thermal resistance
