基于Si衬底的CdSe薄膜蒸镀工艺研究

Study on Evaporation Process of CdSe Thin Films on Si Substrates

采用真空蒸发技术在Si(100)基底上制备了CdSe纳米晶薄膜,利用X射线衍射仪(XRD)、膜厚测试仪、原子力显微镜(AFM)方法对不同蒸发电流下制备的薄膜的结晶情况、表面形貌进行分析表征。结果表明:蒸发电流对CdSe薄膜的结晶性能和表面形貌有显著影响。当蒸发电流为75 A时,CdSe薄膜沿(002)方向的衍射峰相对较强,沿c轴取向择优生长优势明显,薄膜厚度约为160 nm,晶粒尺寸约为40 nm,颗粒均匀;薄膜表面平整光滑,表面粗糙表面粗糙度(5.63 nm)相对较低,薄膜结晶质量较好。

CdSe nanocrystalline thin films were prepared by vacuum evaporation technique on the substrate of Si（100） under the different evaporation currents. The analysis and characterization of crystallization properties and surface morphology were carried out with the aid of modern analytical techniques,including XRD,thickness testing instrument and AFM. The results show that the evaporation current significant influence on crystalline properties and morphology of CdSe thin films. When the evaporation current is 75 A,the strongest diffraction apex was on the（002） crystal face,which exhibits an obvious growth advantage of the film with the c axis orientation,the thickness of film is about 160 nm and the grain size is about 40 nm. The sample surface for 75 A is smooth and crack-free with root mean square（RMS） roughness 5. 63 nm. This results shown that the crystallization of the thin film is good.