Problems and Properties of a Current Amplifier When Realized in Ultra Deep Sub-micron Technology
Problems and Properties of a Current Amplifier When Realized in Ultra Deep Sub-micron Technology
出处
《通讯和计算机（中英文版）》
2017年第1期39-45,共7页
Journal of Communication and Computer
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1黄国勇.基于IP的SOC设计[J].世界电子元器件,2001(9):33-35. 被引量：1
-
2吴毅强,王志功,王俊椋,马力,徐建,唐路.Lower-power, high-linearity class-AB current-mode programmable gain amplifier[J].Journal of Semiconductors,2014,35(10):98-104.
-
3曹艳荣,马晓华,郝跃,田文超.Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs[J].Chinese Physics Letters,2010,27(3):262-265. 被引量：2
-
4雷晓艺,刘红侠,张凯,张月,郑雪峰,马晓华,郝跃.Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET[J].Chinese Physics B,2013,22(4):434-437.
-
5李松亭,李建成,谷晓忱,王宏义,庄钊文.A high linearity downconverter for digital broadcasting system[J].Journal of Semiconductors,2014,35(12):114-122.
-
6郑齐文,崔江维,余学峰,郭旗,周航,任迪远.Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress[J].Chinese Physics Letters,2014,31(12):82-84.
-
7王一奇,赵发展,刘梦新,吕荫学,赵博华,韩郑生.Analysis and optimization of current sensing circuit for deep sub-micron SRAM[J].Journal of Semiconductors,2011,32(11):157-161.
-
8Ren Hongxia Zhang Xiaoju Hao Yue Xu Donggang(Microelectronics Institute, Xidian University, Xi’an 710071).STUDY ON THE RELATION BETWEEN STRUCTURE AND HOT CARRIER EFFECT IMMUNITY FOR DEEP SUB-MICRON GROOVED GATE NMOSFET's[J].Journal of Electronics(China),2003,20(3):202-208.
-
9郑齐文,崔江维,周航,余德昭,余学峰,陆妩,郭旗,任迪远.Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J].Chinese Physics B,2015,24(10):380-385.
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10郑齐文,余学峰,崔江维,郭旗,任迪远,丛忠超,周航.Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation[J].Chinese Physics B,2014,23(10):362-368.
