碳化硅与氧化铝界面化学稳定性研究

THERMODYNAMIC ANALYSIS OF THE CHEMICAL STABILITY OF SILICON CARBIDE AND ALUMINA INTERFACE

借助最新最权威基本的热力学数据 ,按化学平衡理论 ,分析 Si C和 Al2 O3之间可能发生的化学反应 ,定量计算 Si C中不同 C活度、不同固相产物活度 ,不同温度下 Si C和 Al2 O3间诸反应各气相产物分压和分压总和 ,精确分析 Si C和 Al2 O3界面的热力学稳定性 ,提供一个大气压惰性气体环境 Si C和 Al2 O3界面的热力学失稳判据 ,为Si

Based on the most updated and authorized thermodynamic data, the reactions between SiC and Al 2O 3 have be studied using the equilibrium theory of chemical reactions. The partial pressure of each gaseous product of the reactions is quantitatively analyzed by taking into accounts the carbon activity in SiC and unit and reduced activities of solid reaction products. The chemical stability of SiC Al 2O 3 interface under an inert ambient of 1 atmosphere has been judged. The criterion used in the judgement is that the total pressure of all gaseous products is over 1 atmosphere. The quantitative results are provided as reliable references for materials research.