45nm MOSFET射频小信号噪声等效电路建模直接提取方法

RF small-signal noise equivalent circuit modeling of 45 nm MOSFET

针对45 nm MOSFET射频等效电路建模和参数提取技术进行了研究,在精确地提取了射频小信号模型参数之后,基于双端口网络的噪声相关矩阵和多端口噪声理论,使用本征电路的噪声电流源嵌入有噪声贡献的元件,从而分析推导出射频噪声参数模型,并与商用的45 nm CMOS射频测量值相对比,在相应的频段内显示出很好的正确性。

RF equivalent circuit modeling and parameter extraction techniques for 45 nm MOSFET device are presented and veri- fied. After accurately extracting the RF small-signal model parameters, on the basis of the noise correlation matrix of two-port net- works and on the multiport noise theory, the noise sources in the intrinsic circuit embed all the components that contribute to the thermal RF noise, then RF noise parameters were analytically derived, which are compared to RF measurements of a commercial state-of-the-art 45 nm CMOS process, showing very good accuracy in corresponding frequency regime.