摘要
N-polar GaN以其特有的材料特性和化学活性日益受到研究者关注,而N-polar GaN上欧姆接触也成为研究的热点。以Ti/Al/Ni/Au作为欧姆接触金属,分析了N-polar GaN上欧姆接触的最优退火条件,并借助剖面透射电子显微镜(TEM)和能量色散X射线能谱仪(EDX)研究了金属和N-polar GaN之间的反应生成物。结果表明,当退火温度升高到860℃时,可得到比接触电阻率ρc为1.7×10^(-5)Ω·cm^2的最优欧姆接触特性。TEM和EDX测试发现,除了生成已报道的AlN,还会在界面处产生多晶AlO_x,两者共同作用会进一步拉高势垒,从而对N-polar GaN上欧姆接触产生不利影响。
N-polar GaN and ohmic contact on it have received more attentions for its unique material properties and chemical activity. Using Ti/Al/Ni/Au as ohmic contact metals, optimal annealing conditions and interracial reactions between metals and N- polar GaN were studied by cross-section transmission electron microscopy （TEM） and energy dispersive X ray energy spectrometer （EDX）. Results showed that when the annealing temperature was increased to 860℃, the optimal specific contact resistivity pc was 1.7×10^-5Ω·cm^2. TEM and EDX analyses showed that, in addition to reported AlN, polycrystalline AlOx were founded at the in- terface. They both increase the height of potential barrier and result in adverse effects on ohmic contact on N-polar GaN.
作者
王现彬
王颖莉
赵正平
WANG Xianbin WANG Yingli ZHAO Zhengping(College of Physical and Electrical Information Engineering, Shijiazhuang University, Shijiazhuang 050000 College of Information Engineering, Hebei University of Technology, Tianjin 300130)
出处
《材料导报》
EI
CAS
CSCD
北大核心
2017年第4期14-16,共3页
Materials Reports
基金
河北省科技计划项目(15210606)
石家庄学院科研启动项目(16BS004)
