磷化铟量子点合成的研究进展

Progress on Synthesis of Indium Phosphide Quantum Dots

综述了磷化铟量子点合成研究的最新进展。由于磷化铟量子点材料具有低毒性(不含铅镉等重金属有毒性元素),且具有优异的发光性质(如荧光发光峰在可见至近红外发光范围内可调,荧光量子产率高,稳定性好),在新型发光器件、显示器件、光检测器件和生物荧光成像中有广泛的应用前景。经过近三十年的发展,磷化铟量子点的合成研究取得了长足的进步,其光学性质已经可以和Ⅱ-Ⅵ和Ⅳ-Ⅵ族量子点材料的性能参数相媲美。围绕如何开发和优化磷化铟量子点的合成策略,提高材料的光学性能这一主题进行介绍,分别从磷化铟量子点的体相成分、表面配体、核壳结构的调控及优化等方面进行了阐述。最后对磷化铟量子点材料的目前合成研究存在的问题和未来趋势进行展望。

This review highlights the recent progresses on the synthesis of indium phosphide （InP） quantum dots （QDs）. Due to their low toxicity without using heavy metallic elements, such as Cadmium and Lead, InP QDs with bright, stable and highly tunable visible to near-infrared photoluminescence hold great promises for applications in light-emitting devices, dis- plays, photodetectors, and biomedical fluorescent imaging. Over the past three decades, numerous progresses have been made in developing and optimizing the strategies for the synthesis of high quality InP QDs with good fluorescent properties, which are comparable to II-VI and IV-VI group of QDs. This review focuses on the synthetic parameters; the composition control; the choice of surface ligand and the formation of core/shell structures. The last but not the least, we envision the problems and the prospects of the research trends for the synthesis of InP QDs.