摘要
Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers.Here we report on the chromium（Cr） and manganese（Mn）doping in atomically-thin MoS_2 crystals grown by chemical vapor deposition.The Cr/Mn doped MoS_2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra,respectively,compared with the undoped one at 1.85 eV.The field-effect transistor（FET） devices based on the Mn doping show a higher threshold voltage than that of the pure MoS_2 while the Cr doping exhibits the opposite behavior.Importantly,the carrier concentration in these samples displays a remarkable difference arising from the doping effect,consistent with the evolution of the FET performance.The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy.The successful incorporation of the Mn and Cr impurities into the monolayer MoS_2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors.
Recently,two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications.However,the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers.Here we report on the chromium（Cr） and manganese（Mn）doping in atomically-thin MoS_2 crystals grown by chemical vapor deposition.The Cr/Mn doped MoS_2 samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra,respectively,compared with the undoped one at 1.85 eV.The field-effect transistor（FET） devices based on the Mn doping show a higher threshold voltage than that of the pure MoS_2 while the Cr doping exhibits the opposite behavior.Importantly,the carrier concentration in these samples displays a remarkable difference arising from the doping effect,consistent with the evolution of the FET performance.The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy.The successful incorporation of the Mn and Cr impurities into the monolayer MoS_2 paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors.
基金
Project supported by the National Young 1000 Talent Plan
the Pujiang Talent Plan in Shanghai
the National Natural Science Foundation of China(Nos.61322407,11474058,61674040)
the Chinese National Science Fund for Talent Training in Basic Science(No.J1103204)
