摘要
Perovskite/MoS2hybrid thin film transistor photodetectors consist of few-layered MoS2and CH3NH3PbI3film with various thickness prepared by two-step vacuum deposition.By implementing perovskite CH3NH3PbI3film onto the MoS2flake,the perovskite/MoS2hybrid photodetector exhibited a photoresponsivity of 104A/W and fast response time of about 40 ms.Improvement of photodetection performance is attributed to the balance between light absorption in the perovskite layer and an effective transfer of photogenerated carriers from perovskite entering the MoS2channel.This work may provide guidance to develop high-performance hybrid structure optoelectronic devices.
Perovskite/MoS_2 hybrid thin film transistor photodetectors consist of few-layered MoS_2 and CH_3NH_3PbI_3 film with various thickness prepared by two-step vacuum deposition.By implementing perovskite CH_3NH_3PbI_3film onto the MoS_2 flake,the perovskite/MoS_2 hybrid photodetector exhibited a photoresponsivity of 10~4A/W and fast response time of about 40 ms.Improvement of photodetection performance is attributed to the balance between light absorption in the perovskite layer and an effective transfer of photogenerated carriers from perovskite entering the MoS_2 channel.This work may provide guidance to develop high-performance hybrid structure optoelectronic devices.
基金
Project supported by the National Natural Science Foundation of China(Nos.11374070,61327009 214320051)
the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09040201)
