摘要
研究了CH_4/H_2/Cl_2感应耦合等离子体刻蚀技术中的关键工艺参数对刻蚀性能的影响。通过对CH_4/H_2/Cl_2气体流量及流量比的优化,在自行设计的InP/InGaAlAs多量子阱结构的外延片上,实现了一种高速低损耗、形貌良好的Bragg光栅制作方法。基于优化后的工艺参数制作了多周期结构的λ/4相移光栅,实现了单片集成的四波长1.3μm分布反馈式激光器阵列。该激光器阵列中激光器的阈值电流典型值为11mA,外微分效率可达0.40 W/A,且实现了边摸抑制比大于46dB的稳定的单纵模激光输出。研究结果表明优化后的ICP光栅刻蚀工艺具有良好的刻蚀精度和可靠性。
The influence of the key process parameters of CH4/H2/C12 inductively coupled plasma （ICP） on the etching performance was systematically investigated. The flow density and the ratio in CH4/H2/C12 gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaA1As multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period λ/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.
出处
《激光与光电子学进展》
CSCD
北大核心
2017年第3期194-199,共6页
Laser & Optoelectronics Progress
基金
国家高技术研究发展计划(2015AA016901)
