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超高色域图案化量子点彩膜的研究 被引量:6

Ultro-high color gamut and patterned color filter based on quantum dot photoresist
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摘要 平板显示中影响色域的两个关键因素为背光源发光光谱特性和彩色滤光片的透过光谱特性。在TFT-LCD的高色域领域,为了实现BT2020标准,我们开发了量子点光刻胶替代彩色滤光片的方法。首先合成新型的量子点光刻胶,将其作为色彩转换膜制备在彩色滤光片下方,通过背光激发量子点自发光,可得到色纯度更高的红绿光。研究表明,自主开发的量子点光刻胶可以有效地进行色转换,可耐受光刻工艺,在高温烘烤和碱性显影下,可保持一定转换效率,且能实现pattern化,避免目前用白光直接搭配彩膜的漏光问题,有效地提高色域。 The spectra of color filter and back light are important factors that affect color gamut in display area.In order to achieve higher color gamut(BT2020)in TFT-LCD area,we developed a novel quantum dot resist which can displace color filter and improve color pure.This quantum dot resist could be patterned through photo process including cleaning,coating,exposure,developing and post bake.The result indicates that quantum dot resist can achieve higher color gamut than quantum dot BLU.
出处 《液晶与显示》 CAS CSCD 北大核心 2017年第3期169-176,共8页 Chinese Journal of Liquid Crystals and Displays
关键词 量子点 光刻胶 图案化 高色域 显示 quantum dot photo resist pattern high color gamut display
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  • 1Kwak J, Bae W K, Lee D, et al. Bright and efficieny full-color colloidal quantum dot light-emitting diodes using an inverted device structur~ [J]. NanoLett. ,2012, 12(5) :2362-2366.
  • 2Neshataeva E, Kuommrll T, Bacher G, et al. All-inorganic light emitting device based on ZnO nanoparticles [J]. Applied Physics Letters, 2009, 94(9): 091115/1-3.
  • 3Wood V, Panzer M J, Caruge J M, et al. Air-stable operation of transparent, colloidal quantum dot based LEDs with a unipolar device architecture [J]. Nano Lett., 2010, 10(1) : 24-29.
  • 4Xuan R W, Xu J P, Zhang X S, et al. Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots [J].Appl. Phys. Lett. , 2011, 98(4) :041907/1-3.
  • 5Kim T H, Cho K S, Lee E K, et al. Full-colour quantum dot displays fabricated by transfer printing [J]. Nature Photon, 2011, 5(3) :176-182.
  • 6Caruge J M, Halpert J E, Wood V, et al. Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers [J]. Nature Photon, 2008, 2(4): 247-250.
  • 7Mueller A H, Petruska M A, Achermann M, et al. Multicolor light-emitting diodes based on semiconductor nano- crystals encapsulated in GaN charge injection layers [J]. Nano Lett. , 2005, 5(6):1039-1044.
  • 8Mu W M, Zhang P, Xu J, et al. Direct-current and alternating-current driving Si quantum dots based light emit- ting device [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(4):8200106 /1-6.
  • 9Kobayashi S, Tani Y, Kawazoe H. Quantum dot activated all-inorganic electroluminescent device fabricated using solution-synthesized CdSe/ZnS nanocrystals [J]. Japanese Journal of Applied Physics Part 2-Letters g~ Ex- press Letters, 2007, 46(36-40): L966-L969.
  • 10Wood V, Panzer M J, Halpert J E, et al. Selection of metal oxide charge transport layers for colloidal quantum dot LEDs [J].ACS Nano, 2009, 3(11): 3581-3586.

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