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Electron Transport Properties of Two-Dimensional Si_1P_1 Molecular Junctions

Electron Transport Properties of Two-Dimensional Si_1P_1 Molecular Junctions
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摘要 We focus on two new 21) materials, i.e., monolayer and bilayer silicon phosphides (Sil P1). Based on the elastic- scattering Green's function, the electronic-transport properties of two-dimensional monolayer and bilayer Au- Si1P1-Au molecular junctions are studied. It is found that their bandgaps are narrow (0.16eV for a monolayer molecular junction and 0.26 e V for a bilayer molecular junction). Moreover, the calculated current-voltage char- acteristics indicate that the monolayer molecular junction provides constant output current (20 hA) over a wide voltage range, and the bilayer molecular junction provides higher current (42 hA). We focus on two new 21) materials, i.e., monolayer and bilayer silicon phosphides (Sil P1). Based on the elastic- scattering Green's function, the electronic-transport properties of two-dimensional monolayer and bilayer Au- Si1P1-Au molecular junctions are studied. It is found that their bandgaps are narrow (0.16eV for a monolayer molecular junction and 0.26 e V for a bilayer molecular junction). Moreover, the calculated current-voltage char- acteristics indicate that the monolayer molecular junction provides constant output current (20 hA) over a wide voltage range, and the bilayer molecular junction provides higher current (42 hA).
作者 高瑞方 苏文勇 王锋 冯万祥 Rui-Fang Gao Wen-Yong Su Feng-Wang Wan-Xiang Feng(School of Physics, Beijing Institute of Technology, Beijing 100081)
机构地区 School of Physics
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第2期88-91,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 11374033
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