摘要
It is well known that conventional CalnP/GMnAs/Ce three-junction （3J） solar cells are difficult to continue to ascend when the effieiencies reach 32% and 42% under AMO and AM1.5D concentrated, respectively. In AlCaInP/AiGMnAs/CalnAs/CalnNAs/Ce five-junction （5,/） solar cells, the performance of the AlGaInP, Al- CalnAs and CalnNAs sub cell is the key factor for conversion efficiency of the 5J solar cell. We investigate the AlCaInP/AlCaInAs/Ge 3J solar cell. By incorporating surfactant trimthylantimony into the AlGaInP material, the crystal quality of AICalnP is improved and the spectrum absorption range of AICalnAs is extended. The current density of each sub cell exceeds ll.3mA/cm2 as is desired. Then we apply this 3J structure to grow the lattice-matched 5J solar ceil and obtain the short circuit current of 134.96 mA, open circuit voltage of 4399.6 m V, fill factor of 81.7% and conversion efficiency of 29.87%.
It is well known that conventional CalnP/GMnAs/Ce three-junction （3J） solar cells are difficult to continue to ascend when the effieiencies reach 32% and 42% under AMO and AM1.5D concentrated, respectively. In AlCaInP/AiGMnAs/CalnAs/CalnNAs/Ce five-junction （5,/） solar cells, the performance of the AlGaInP, Al- CalnAs and CalnNAs sub cell is the key factor for conversion efficiency of the 5J solar cell. We investigate the AlCaInP/AlCaInAs/Ge 3J solar cell. By incorporating surfactant trimthylantimony into the AlGaInP material, the crystal quality of AICalnP is improved and the spectrum absorption range of AICalnAs is extended. The current density of each sub cell exceeds ll.3mA/cm2 as is desired. Then we apply this 3J structure to grow the lattice-matched 5J solar ceil and obtain the short circuit current of 134.96 mA, open circuit voltage of 4399.6 m V, fill factor of 81.7% and conversion efficiency of 29.87%.
