摘要
The Sr0.95Ba0.05 TiO3 （SBT） nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M（q） = 12.3656 - 267.4038｜q（t）｜is calculated, where M（q） denotes the memristance depending on the quantity of electric charge, and q（t） denotes the quantity of electric charge depending on the time. The theoretical I-V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I-V characteristics are consistent with the measured I-V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
The Sr0.95Ba0.05 TiO3 （SBT） nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M（q） = 12.3656 - 267.4038｜q（t）｜is calculated, where M（q） denotes the memristance depending on the quantity of electric charge, and q（t） denotes the quantity of electric charge depending on the time. The theoretical I-V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I-V characteristics are consistent with the measured I-V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
基金
Supported by the National Natural Science Foundation of China under Grant No 61473177
the Research Fund for the Doctoral Program of Higher Education of China under Grant Nos 2013371812009 and 20133718110011
the Natural Science Foundation of Shandong Province under Grant No ZR2014FQ006
the China Postdoctoral Science Foundation under Grant No 2015M582114
the Shandong Postdoctoral Special Foundation under Grant No 201502017
the Qingdao Science and Technology Plan Project under Grant No 15-9-1-39-jch
the Qingdao Postdoctoral Science Foundation
