金刚石半导体材料和器件的研究现状

Research Status of the Diamond Semiconductor Materials and Devices

简述了金刚石半导体材料的主要制备方法,以及掺杂技术及其在器件制备中应用的研究现状。重点介绍了微波等离子体化学气相沉积(MPCVD)法制备高质量金刚石的优势以及在生长速率、晶体尺寸和晶体质量等方面的研究进展及阻碍因素,并探讨了实现金刚石大尺寸高质量生长的方法。通过对金刚石进行掺杂,可使其呈现p型和n型导电。总结了金刚石p型、n型掺杂及共掺杂的研究现状,并分析了金刚石在掺杂过程中出现的问题,探讨了p型掺杂和n型掺杂的研究方向。最后给出了金刚石在电力电子器件、探测器和场发射器件中的应用现状,并对金刚石的未来发展方向作出了展望。

The main preparation method of the diamond semiconductor material,the research status of doping techniques and their application in the device fabrication are briefly described.The advantages of the microwave plasma chemical vapor deposition（MPCVD）method for high-quality diamond preparation are mainly presented.The research advances and obstacles about the growth rate,growth size and quality of diamond are introduced,and some methods to obtain large-size high-quality diamond semiconductor materials are discussed.Besides,the diamond can show ptype and n-type conductivity through doping.The research statuses of p-type doping,n-type doping and co-doping for diamond are summarized.The problems in the doping of diamond are analyzed,and the research trends of the p-type doping and n-type doping are discussed.Finally,the application statuses of diamond semiconductor in the fields,such as power electronic devices,detectors and field emission devices,are introduced,and the future development directions of diamond are prospected.