微波高功率固态放大器技术综述

A review of microwave high power solid state power amplifier

微波集成电路在民用和军用电子中起到至关重要的作用.在微波集成电路领域,高功率的功率放大器为发射机提供足够的信号功率输送到自由空间中,是其不可缺少的关键部件.基于学术研究和商用产品线情况,综述了微波功率放大器芯片的发展情况.首先讨论了各种微波毫米波功率放大器的制造技术,按照半导体器件可以归类为砷化镓、氮化镓、互补金属氧化物半导体和锗化硅等;接着讨论了微波芯片功放的设计技术用以满足高功率、宽带和高效率的指标要求;最后总结了各类微波固态功率放大器的工艺和设计技术,为芯片设计人员提供了全面的设计参考.

Monolithic microwave integrated circuit （ MMIC） has played an important role in consumer and military applications.Among MMICs,high power amplifier is indispensable and the most complex component which enable transmitter delivers signal with sufficient power into free space.This paper provides chip designers a comprehensive design references and reviews the current development status of MMIC power amplifier basing on academic reports and commercial products datasheet. Firstly, various MMIC PA fabrication technologies classified as GaAs, GaN, CMOS and SiGe etc. are discussed. Then MMIC PA design techniques for satisfying specifications like high power output,broadband and high efficiency are introduced. Finally,paper concludes the processes and design techniques for MMIC power amplifier.