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A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode
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摘要 We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect. We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第1期107-109,共3页 中国物理快报(英文版)
基金 Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102 the National Basic Research Program of China under Grant Nos 2012CB3155605,2013CB632804,2014CB340002 and 2015CB351900 the National Natural Science Foundation of China under Grant Nos 61574082,61210014,61321004,61307024,and 51561165012 the High-Technology Research and Development Program of China under Grant No 2015AA017101 the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3 the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10 the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505 the Science Challenge Project under Grant No JCKY2016212A503 the Guangdong Province Science and Technology Program under Grant No 2014B010121004
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