电感耦合等离子体原子发射光谱(ICP-AES)法测定铸造铝ADC12中硅

Determination of Silicon in Die Casting Aluminum Alloy(ADC12) by Inductively Coupled Plasma Atomic Emission Spectrometry

在微波消解仪中以氢氧化钠溶解试样,然后滴加过氧化氢,使得铸造铝ADC12中的硅完全溶解,并采用电感耦合等离子体原子发射光谱(ICP-AES)法测定,硅的质量百分数平均值为10.31%的情况下,标准偏差0.09%,相对标准偏差(RSD)为0.83%。对比了国家标准方法中加热板消解法与微波消解法对硅加标回收率的影响,加热板消解法的加标回收率低于微波消解法,微波消解法辅助前处理样品,促使样品在短时间内反应完全,实验步骤简便,结果满意。

In this paper, the die casting aluminum alloy sample （ADC12） was digested completely with sodium hydroxide by a microwave digestion instrument. The silicon content was determined by inductively coupled plasma atomic emission spectrometry （ICP-AES）. The standard deviation was 0.09% when the average value of Si content was 10.31% and the relative standard deviation （RSD） was 0.83%. Compared to the electric hot plate digestion method described in the national standard, the microwave digestion method had higher Si recovery rate. Using microwave digestion method for sample pretreatment, samples can react thoroughly within a short time, and experimental procedure is simple and results are satisfactory.