钛掺杂三氧化钨薄膜结构与电致变色性能研究

Structure and Electrochromic Properties of Titanium-doped WO_3 Thin Film by Sputtering

通过射频溅射法,常温下制备了纯相WO_3和Ti掺杂WO_3薄膜,采用XRD、SEM、Raman、电化学工作站、紫外–可见–近红外分光光度计等对薄膜的微观结构、循环稳定性、光学性能进行了表征和分析。研究发现:钛掺杂对WO_3薄膜的表面形貌和光学常数影响不明显,但使薄膜的晶化温度升高。电化学测试结果表明,Ti掺杂可以提高离子在薄膜中注入/抽出的可逆性,提高薄膜的循环稳定性,同时薄膜的响应速度和光学调制性能也得到提高,掺杂后薄膜着色态和漂白态的响应时间分别由9.8、3.5 s减小为8.4、2.7 s,因此Ti掺杂WO_3薄膜具有更好的电致变色性能。

Pure and Ti-doped WO3 thin films prepared by RF （radio-frequency） magnetron at room temperature were determined by XRD, Raman and SEM to analyze the micro-structure and the morphology of the films. In addition, elec- trochemical workstation and UN-Vis-NIR spectrophotometer were used to measure their cycling stability and optical property. Research results showed that Ti doping had little interference with the surface morphology and optical constants, but the film crystallization temperature could be increased by Ti doping. Electrochemical test results showed that Ti dop- ing could improve reversibility of ion injection and extraction, and improve cycling performance of films. Meanwhile, the switching speed and optical modulation performance of films were enhanced. In detail, the switching time of colored and bleached states were shortened from 9.8 s and 3.5 s to 8.4 s and 2.7 s, respectively. Therefore, Ti doped WO3 thin films has better electrochromic properties.