射频反应磁控溅射制备的SnO_2及SnO_2:F薄膜结构与透明导电性能

Structure and Transparent Conductive Properties of SnO_2 and SnO_2:F Films Deposited by RF Reactive Magnetron Sputtering

以Sn和Sn+SnF_2为靶材,采用射频(RF)反应磁控溅射法在150℃不同O_2流量下制备了厚度约为300 nm的SnO_2和SnO_2:F薄膜。通过X射线衍射、Hall效应测试系统和紫外–可见分光光度计研究了两种薄膜的结构和透明导电性能。结果表明:随O_2流量增加,SnO_2薄膜由非晶变为多晶,择优取向从(101)面过渡到(211)面,薄膜电阻先减小后增大,平均透光率逐渐上升。随O_2流量增加,SnO_2:F薄膜结构与透明导电性能的变化规律与SnO_2薄膜类似,SnO_2:F薄膜的择优取向依次为(002)、(101)和(211)面,由于F掺杂,SnO_2:F薄膜的载流子浓度和迁移率明显增加,电阻率降低,同时平均透过率有所提高。目前,在合适的O_2流量下,SnO_2:F薄膜可达到的最低电阻率为4.16×10^(–3) ?·cm,同时其平均透光率为86.5%。

SnO2 and SnO2：F thin films with a thickness of approximately 300 nm were deposited via radio frequency（RF） reactive magnetron sputtering at different O2 fluxes at 150 ℃ with Sn and Sn＋SnF2 as targets. The structure and transparent conductive properties of SnO2 and SnO2：F films were investigated by X-ray diffraction, the Hall effect measurement system and UV-Vis spectrophotometry. The results show that SnO2 films show a transition from amorphous to polycrystalline and the preferred orientation of crystalline films gradually transform from （101） plane to （211） plane as O2 flux increases. The resistivity of SnO2 films firstly decreases and then increases while their average transmittance increases gradually with increasing O2 flux. The changes of structure and transparent conductive properties with O2 flux in SnO2：F films are similar to those in SnO2 films. However, the preferred orientation of SnO2：F films shows （002）, （101） and （211） plane. Furthermore, the carrier concentration and mobility of SnO2：F films increase because of F doping, thus decreasing the film resistivity. Also, the average transmittance of the films increases because of F doping. The SnO2：F film has a minimum resistivity of 4.16× 10-3 Ωcm and an average transmittance of 86.5% at a proper O2 flux.