光学浮区法生长掺铟氧化镓单晶及其性能

Growth and Properties of β-Ga_2O_3:In Single Crystal by Optical Floating Zone Method

采用光学浮区法生长了尺寸f(7~9 mm)×(30~35 mm)的β-Ga_2O_3:In单晶。X射线衍射物相分析表明,β-Ga_2O_3:In单晶仍属于单斜晶系。研究了不同In掺杂量的β-Ga_2O_3:In单晶的吸收光谱和电学性能。结果表明:与纯β-Ga_2O_3单晶相比,β-Ga_2O_3:In单晶在红外波段存在明显吸收。β-Ga_2O_3:In单晶的电导率在10^(–2)量级,Holl载流子浓度可以达到6×10^(19)/cm^2,说明掺杂In^(3+)对β-Ga_2O_3单晶的电学性能有明显改善。

β-Ga2O3：In single crystal with 30-35 mm in length and 7-9 mm in diameter was grown by an optical floating zone method. Based on the X-ray diffraction analysis, β-Ga2O3：In single crystal obtained belongs to a monoclinic crystal system. The absorption spectra and electric properties offi-Ga2O3：In crystal doped with different mole fractions of In3＋ were investigated. The results indicate that compared to pure β-Ga2O3 crystal, β-Ga2O3：In single crystal has an intense absorption in the infrared band. The conductivity of β-Ga2O3：In single crystal is above 10-2 S/cm, and the carrier density can achieve 6×1019/cm2. It is indicated that the doping of In3＋ could improve the electrical properties of the β-Ga2O3 single crystal.