X波段100W GaAs单片大功率PIN限幅器

X-band 100W GaAs Monolithic High Power PIN Limiter

功率GaAsPIN限幅器已广泛地应用于微波系统中，以保护接收支路中的低噪声放大器。南京电子器件研究所研制出x波段100WGaAs单片大功率PIN限幅器。根据大功率要求，优化了GaAsPIN二极管的I层厚度和表面结构，建立了大、小信号模型，通过优化设计，

A high power PIN diode limiter was developed on 4-inch epitaxial GaAs wafer.According to power requirement,the I-layer width and surface structure of GaAs PIN was optimized.The limiter was designed using established linear and nonlinear PIN model.The fabricated limiter can endure 100 Winput power and has only 0.65 dB insertion loss,less than 1.5input and output VSWR from 8.5GHz to 10.5GHz.It can endure 100 Winput pulse power(9.5GHz,width 8ms,duty cycle 40%)for 20 minutes at package temperature of 120℃,while its output leakage power is less than 17.5dBm.