摘要
针对IGBT的开通过程中,研究了感性负载条件下IGBT的开通过程中栅极电压、集电极电流、集射极电压随时间变化的特点及其相互关系。详细阐述了栅极电容随栅极电压变化的机理以及栅极平台电压产生的机理,分析了驱动电阻对栅极电压的影响。根据IGBT开通电流特点,提出用二次函数来拟合IGBT开通时的集电极电流波形,同时还分析了主回路杂散电感对开通波形的影响。搭建了IGBT动态开关特性测试平台,测量结果验证了本文分析的正确性。
In the turn-on process of insulated gate bipolar transistor（ IGBT）,under the inductive load condition,the gate voltage,collector current and emitter voltage vary with time,and the changing characteristics and their relationships are analyzed in this paper. A detailed description of mechanism of gate voltage-dependent gate capacitance and generation mechanism of gate voltage plateau is given in this paper and the influence of driving resistance on gate voltage is analyzed. A quadratic function is proposed to fit collector current curve based on the characteristic of collector current during the turn-on transient. The impacts of stray inductance in major circuit on turn-on waveforms are studied.Experimental results of IGBT dynamic switch characteristics test platform verified the accuracy of the analysis in this paper.
作者
唐新灵
崔翔
张朋
李金元
赵哿
TANG Xinling CUI Xiang ZHANG Peng LI Jinyuan ZHAO Ge(State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources, North China Electric Power University, Beijing 102206, China Global Energy Interconnection Research Institute, Beijing 102209, China)
出处
《华北电力大学学报（自然科学版）》
CAS
北大核心
2017年第2期33-41,共9页
Journal of North China Electric Power University：Natural Science Edition
基金
国家重大科技专项02专项(2015ZX02301)
