半导体激光器线阵列封装应力研究

Study on packaging stress of semiconductor laser linear array

本文主要研究了在808nm半导体激光器线阵列封装中,不同焊料(In焊料和Sn63Pb37焊料)封装应力对激光器光谱的影响。两种焊料制作线阵列,铟焊料阵列平均半宽为2.1nm,锡63铅37焊料阵列半宽为2.8nm。在经过电流21A、温度22±3℃、时间16h老化后,铟焊料阵列波长漂移为0.1nm,锡63铅37焊料阵列坡长漂移为0.7nm。实验结果证明了铟焊料封装应力小于锡铅焊料的应力。

In this paper, the effects of different solder（In solder and Sn63Pb37 solder） packaging stress on the spectrum of 808 nm laser diode array are studied. Two kinds of solder wire array, the average half width of indium solder array is 2.1nm, tin 63 lead 37 solder array half width is 2.8nm. After the current 21 A, temperature 22 ＋-3 C, time 16 h aging, indium solder array wavelength drift of 0.1nm, tin-lead 37 solder array slope length drift of 0.7nm. The experimental results show that the stress of indium solder is less than that of Sn Pb solder.