低温磁控溅射制备AZO薄膜及绒面研究

Preparation of AZO Thin Films by Magnetron Sputtering at Low Temperature and Their Textured Structures

采用直流射频耦合磁控溅射技术,以氧化锌掺铝(AZO,2%Al_2O_3,质量分数)陶瓷靶为靶材,在玻璃基片上低温沉积AZO薄膜,并采用质量分数为0.5%的HCl溶液刻蚀制备绒面AZO薄膜,通过XRD、SEM、分光光度计、霍尔效应测试系统、光电雾度仪等设备重点研究工作压强对直流射频耦合磁控溅射制备AZO薄膜的晶相结构、表面形貌、光电性能以及后期制绒的影响。研究表明,直流射频耦合磁控溅射可以在低温下制备性能优异的AZO薄膜,且随着工作压强的减小,致密性增强,光电性能改善,后期刻蚀得到具有良好陷光作用的绒面结构。在工作压强0.5 Pa下,低温制备的AZO薄膜电阻率达到3.55×10^(-4)Ω·cm,薄膜可见光透过达到88.36%,刻蚀后电阻率为4.19×10^(-4)Ω·cm,可见光透过率89.59%,雾度达24.7%。

AZO films were deposited on glass substrates by DC coupled RF magnetron sputtering at low temperature with a AZO ceramic target（2 wt% Al2O3）, and then AZO films were etched by the 0.5 wt% HCl solution to obtain textured structures. Crystal phase structure, surface morphology, optical, electrical properties and the textured structure of AZO films mainly influenced by working pressure were characterized by XRD, SEM, spectrophotometer, hall effect test system and photoelectric haze instrument, respectively. The results show that AZO thin films with excellent performance can be prepared by DC coupled RF magnetron sputtering at low temperatures. With the decrease of working pressure, the compactness of AZO films increases, and their photoelectric performance improves, and textured structures with good light trapping effect is obtained by post etching. Under working pressure of 0.5 Pa, the resistivity of AZO thin films prepared at low temperature is 3.55× 10^-4 Ω·cm, and the transmittance at visible light is 88.36%. After etching, their resistivity and transmittance at visible light are 4.19× 10^-4 Ω·cm and 89.59%, respectively, and the haze reaches to 24.7%.