纳米硅对中华结缕草种子萌发和幼苗期生长的影响

Effects of Nano-silicon on the Germination and Seedling Growth of Zoysiasinica

为解决中华结缕草种子发芽率低、幼苗长势慢等问题,采用纳米硅进行改良。研究共设置了4个纳米硅浓度梯度(10,20,40,80 mg·L^(-1)),对种子和幼苗进行处理。结果发现:浓度为20 mg·L^(-1)时能显著提高发芽势和发芽率;浓度为40 mg·L^(-1)时,能显著提高幼苗株高、根长、地上/地下鲜质量等,且显著提高绿色指数并提升景观效果;另外,也可在中度干旱胁迫下,保持较高绿叶率并减轻胁迫带来的伤害度。因此,施用适量的纳米硅对中华结缕草种子萌发能力、苗期的生长量和抗性能力具有显著提升的作用。

In order to solve the problem of low seed germination rate and slow seedling growth of Zoysiasinica Hanc, nano-silicon was used to improve it. Four nano-silicon concentration gradients（10, 20, 40 and 80 mg · L^-1） were set up to treat seed and seedling. The results showed that the concentration of 20 mg · L^-1could significantly increase the germination rate and germination rate. When the concentration was 40 mg · L^-1, the plant height, root length, fresh weight of aboveground and underground significantly increased, the landscape index also increased, and the landscape effect enhanced. Under moderate drought stress, it can maintain a higher green leaf rate and reduce the degree of injury caused by the stress. Therefore, the application of appropriate amount of nano-silicon on the Zoysiasinica Hance has significantly role on improving the seeds germination ability, seedling growth and resistance capacity.