摘要
相变存储器的诞生,是人类存储技术的一个里程碑,它改善了传统DRAM存储方式的缺陷,进一步拓展了计算机内存,使计算机结构发生了创新性的变革。本文从相变存储器的概念入手,对其相变存储技术进行初步的分析研究,总结它的规律和特点,以期为今后的存储技术教学带来一些有益的帮助。
The birth of phase change memory is a milestone of human storage technology. It improves the defects of traditional DRAM storage and further expands the computer＇s memory, making innovative changes to the computer architecture. This article starts with the concept of phase change memory, studies on the phase change storage technology preliminarily, summarizes its rule and characteristics, hoping to bring some useful help to the storage technology teaching.
出处
《电脑与电信》
2017年第3期69-71,共3页
Computer & Telecommunication
关键词
相变存储器
存储系统
存储技术
phase change memory
storage system
storage technology
