摘要
干法刻蚀是压阻式加速度传感器制备中的关键工艺,金属掩膜层的图形化对刻蚀结果尤为重要。金属掩膜层图形化的效果影响着压敏电阻条的刻蚀效果,进而影响传感器性能。利用磁控溅射在Si和SiC衬底上分别溅射金属Al和Ni作为金属掩膜层,并对二者的图形化效果进行对比,同时借助激光共聚焦扫描显微镜(CLSM)观察分析金属腐蚀速率、图形化后结构的形貌、线宽损失等参数。实验证明:对于小结构(线宽小于50μm)而言,金属Al由于致密性不好,图形化后的结构模糊不规则;金属Ni作为掩膜层图形化后的结构形貌清晰、形状规则、线宽损失小。
Dry etching is a key process in the preparation of piezoresistive accelerometers,and the patterning of the metal mask is particularly important for etching result.The patterning result of the metal mask layer influences the etching effect of the pressure sensitive resistance strips,and then affects the performances of the sensors.With the magnetron sputtering,Al and Ni were sputtered on Si and SiC substrates as metal mask layers,respectively,and the patterning results of the two metal mask layers were compared.Meanwhile,the parameters were observed and analyzed by the confocal laser scanning microscope(CLSM),including the corrosion rate of metals,the shape of the patterned structure,the loss of line width and so on.The experimental results show that for small structures(the line width is less than 50μm),the patterned structure of Al is fuzzy and irregular owing to its poor compactness.As a mask layer,the patterned metal Ni has the advantages of clear structure,regular shape and small line width loss.
出处
《微纳电子技术》
北大核心
2017年第5期360-363,共4页
Micronanoelectronic Technology