InGaP/GaAs HBT器件的制备及其特性

Fabrication and Characteristics of InGaP/GaAs HBT Devices

采用在发射区台面腐蚀时保留InGaP钝化层和去除InGaP钝化层的方法制备了两种InGaP/Ga As异质结双极晶体管(HBT)器件,研究了InGaP钝化层对HBT器件基区表面电流复合以及器件直流和射频微波特性的影响。对制备的两种器件进行了对比测试后得到:保留InGaP钝化层的HBT器件最大直流增益(β)为130,最高振荡频率(fmax)大于53 GHz,功率附加效率达到61%,线性功率增益为23 dB;而去除InGaP钝化层的器件最大β为50,f_(max)大于43 GHz,功率附加效率为57%,线性功率增益为18 dB。测试结果表明,InGaP钝化层作为一种耗尽型的钝化层能有效抑制基区表面电流的复合,提高器件直流增益,改善器件的射频微波特性。

InGaP/GaAs heterojunction bipolar transistors （HBT） devices with and without the InGaP passivation layer when countertop corrosion happens in the emission zone were fabricated. The effects of the InGaP passivation layer on the surface current recombination of the HBT device base, DC and RF microwave characteristics of HBT devices were studied. The two fabricated devices were com- pared and tested. For the HBT device with the InGaP passivation layer, the maximum DC gain （/3） is 130, the maximum oscillation frequency （fro.x） is more than 53 GHz, the power added efficiency is 61%, and the linear power gain is 23 dB; while for the device without the InGaP passivation layer, the maximum 13 is 50, thefmax is more than 43 GHz, the power added efficiency is 57% and the linear power gain is 18 dB. Test results indicate that as a depleted passivation layer, the InGaP passivation layer can effectively suppress the current recombination on the base surface, enhance the DC gain and improve the RF microwave characteristics of the device.