摘要
本论文主要在DBR光栅结构的设计和制备工艺方面开展了系统地研究工作,采用MOCVD系统对1064nm半导体激光器外延结构进行生长,通过湿法腐蚀工艺制备出了3.5μm宽的脊形波导。在DBR光栅制备过程中,采用325nm全息曝光系统对脊形波导进行全息光刻,并利用ICP干法刻蚀,制备出光栅的周期结构。
In this thesis, the systematic study has been carried in the design of Bragg grating structure and fabricating technology. The 1064 nm epitaxial structure has been grown by MOCVD. The ridge waveguide with 3.5μm width has been fabricated by wet etching. And DBR Bragg grating structure has been made by the 325 nm holographic exposure system and the ICP dry etching.
出处
《电子测试》
2017年第2期17-18,共2页
Electronic Test
