摘要
The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.
The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.
基金
financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
