柔性聚酰亚胺(PI)衬底上ITO薄膜的生长及其透明导电性能影响机制研究

Growth and transparent conductive properties of ITO films on flexible polyimide(PI) substrates

采用直流磁控溅射法在聚酰亚胺(PI)柔性衬底上生长氧化铟锡(ITO)薄膜,采用XP-2探针台阶仪、X射线衍射(XRD)、霍尔测试仪、紫外-可见分光光度计等对ITO薄膜进行结构和光电性能表征。结果表明溅射功率和沉积气压是影响磁控溅射法生长ITO薄膜透明导电性能的主要因素,实验系统研究了溅射功率和沉积气压对ITO薄膜透明导电性能的影响机制。在优化的工艺条件下(溅射功率100W和沉积气压0.4Pa),制备了在可见光区平均透射率达86%、电阻率为3.1×10-4Ω.cm的光电性能优良的ITO透明导电薄膜。

ITO films are deposited on flexible polyimide(PI) substrate by DC magnetron sputtering,and its structural and electrical properties are systematically investigated by X-ray diffraction analysis(XRD),Hall effect measurement(HL) and UV-Vis spectrophotometer.The results indicate that the sputtering power and deposition pressure are the dominant factors influencing the transparent conductive properties of as-grown ITO films on PI substrates,and the effect mechanism of the sputtering power and the deposition pressure are systematically investigated.The high performance ITO transparent conductive film with the visible transparency of 86% and the average resistivity of 3.1×10-4Ω·cm are successfully achieved at the optimized parameters(sputtering power of 100W and deposition presure of 0.4Pa).