铜蒸发温度对共蒸发法制备Cu_2ZnSnSe_4太阳电池的影响

Effect of Copper Evaporation Temperature on the Performance of Cu_2ZnSnSe_4 Thin Film Solar Cells Prepared by Co-evaporation Process

由于Cu元素的含量对Cu_2ZnSnSe_4(CZTSe)化合物的薄膜性质及电池性能都有影响,本文主要研究了不同铜蒸发温度对CZTSe薄膜性质及电池性能的影响。研究表明:当铜蒸发温度较低时(1400℃),CZTSe薄膜中含有SnSe相,同时薄膜呈N型;随着铜蒸发温度的提高,CZTSe薄膜的结晶质量明显提升。但当铜蒸发温度过高时(1500℃),薄膜中含有CuxSey相。二次相SnSe与CuxSey的存在都会使电池失效。最终通过优化铜的蒸发温度,在较合适的1450℃铜蒸发温度条件下制备出效率为2.63%(有效面积0.34 cm^2)的CZTSe太阳电池。

To know well the effect of Cu concentration on the performance of of Cu2ZnSnSe4（CZTSe） thin film solar cells.CZTSe thin film solar cells prepared at different Cu evaporation temperature was investigated.The results indicate that the low TCu（1400 ℃） cause additional reflections of secondary phase Sn Se and the films are N-type conduction.The quality of crystallization of CZTSe films is improved with increasing TCu.But the secondary phase of CuxSeyis observed for CZTSe films deposited at TCuof1500 ℃.Both secondary phase of Sn Se and CuxSeycould cause devices electrically inactive.The best solar cell with an efficiency of 2.63% is obtained at medium TCuof 1450 ℃（active area 0.34 cm2）.