一维光子晶体带隙边缘处态密度突然增强现象的理论分析

Theoretical analysis of DOS sudden enhancement at the edge of band gap in one dimensional photonic crystals

针对一维光子晶体态密度(density of states,DOS)特性,建立数学计算模型,并就其带隙边缘突然增强现象,研究了近似局域最大值与周期数、薄膜材料折射率之间的对应关系。首先计算得到了特定周期数、相对折射率差下的近似局域最大值,接着绘制了DOS带隙特性曲线,验证了局域最大值的准确性。最后通过分析,进一步得到了周期数、相对折射率差对带隙边缘处DOS突然增强现象的调制关系。

The mathematical calculation model of DOS（density of states）is established considered its one-dimensional photonic,It is discussed that the relationships between the edge of the band gap suddenly increasing phenomenon and the number of cycles,the refractive index of thin film material.The approximate local maximum number is calculated,using a specific number of cycles and the relative refractive index difference.The accuracy of is by analyzing the characteristic curve of DOS.Finally,the relationships of modulation between the phenomenon of band gap edge DOS suddenly increasing and the number of cycles,the relative refractive index difference are gotten though further analysis.