常压射频放电占空比对SiO_x薄膜形貌和成分的影响

Effect of Duty Cycle on the Morphology and Chemical Composition of SiO_x Thin Film in Atmospheric Radio Frequency Discharge

采用常压射频等离子体放电技术,以六甲基二硅氧烷(HMDSO)和Ar的混合气体为反应源,成功制备了SiO_x薄膜.通过测量放电的电流-电压曲线以及发射光谱,研究不同占空比对射频放电段放电特性的影响;利用扫描电子显微镜(SEM)、X射线能谱仪(EDS)以及X射线光电子能谱(XPS)研究了不同占空比放电条件下沉积的SiO_x薄膜的表面形貌与化学成分.研究结果表明,占空比对射频放电段的放电特性影响不大,但是随着放电脉冲占空比的增加,薄膜表面变得不平滑,椭球形颗粒增多,薄膜中无机成分也相应增加.

SiOx thin films are synthesized by the atmospheric radio frequency （RF） glow discharges with the mixture of hexamethyldisiloxane （HMDSO） and Ar. The dependence of discharge characteristics of RF discharge burst on duty cycle is studied by measuring the current voltage characteristics and optical emission spectra. The morphology and chemical composition of SiOx film deposited with different duty cycles are investigated by scanning electron microscope （SEM）, energy disperse spectroscopy （EDS）,and X-ray photoelectron spectroscopy （XPS） measurements. The results show that with increasing the duty cycle of pulse modulation, the RF discharge burst keeps the discharge characteristics and elevates the roughness of deposited SiOx film, which is demonstrated by the enhancement of elliptical particle density and the inorganic ingredient in the thin film.