摘要
Chemical vapor deposition has emerged as the most promising technique for the growth of graphene.However, most reports of this technique use either flammable or explosive gases, which bring safety concerns and extra costs to manage risk factors. In this article, we demonstrate that continuous monolayer graphene can be synthesized via chemical vapor deposition technique on Cu foils using industrially safe gas mixtures. Important factors, including the appropriate ratio of hydrogen flow and carbon precursor,pressure, and growth time are considered to obtain graphene films. Optical measurements and electrical transport measurements indicate graphene films are with comparable quality to other reports. Such continuous large area graphene can be synthesized under non-flammable and non-explosive conditions, which opens a safe and economical method for mass production of graphene. It is thereby beneficial for integration of graphene into semiconductor electronics.
Chemical vapor deposition has emerged as the most promising technique for the growth of graphene.However, most reports of this technique use either flammable or explosive gases, which bring safety concerns and extra costs to manage risk factors. In this article, we demonstrate that continuous monolayer graphene can be synthesized via chemical vapor deposition technique on Cu foils using industrially safe gas mixtures. Important factors, including the appropriate ratio of hydrogen flow and carbon precursor,pressure, and growth time are considered to obtain graphene films. Optical measurements and electrical transport measurements indicate graphene films are with comparable quality to other reports. Such continuous large area graphene can be synthesized under non-flammable and non-explosive conditions, which opens a safe and economical method for mass production of graphene. It is thereby beneficial for integration of graphene into semiconductor electronics.
