脉冲串激光辐照光电二极管损伤的数值研究

Numerical Research on Photodiode Damage by Multi-Pulsed Laser Irradiation

所有的光电探测器在受到激光辐照时都可能被损坏,对探测器的性能产生不利的影响。为了研究脉冲串激光辐照对光电二极管造成的损伤,建立了脉冲串激光辐照光电二极管的二维轴对称模型及热源模型,采用有限元软件COMSOL Multiphysics模拟了1064nm毫秒级脉冲串激光辐照光电二极管的温度场分布。研究结果表明脉冲个数N为1,3,5,10,30的脉冲激光辐照下,达到光电二极管的熔融损伤阈值所需的脉冲能量密度范围为19.176.4J/cm^2。研究结果对毫秒级脉冲串激光在激光加工以及激光防护的应用方面具有指导意义。

All of the photoelectric detectors under laser irradiation are likely to be damaged, which has a bad effect on the detector performance. In order to study the photodiode damage caused by the multi-pulsed laser irradiation, a two-dimensional axisymmetric model and a heat source model of the photodiode irradiated by the multi-pulsed laser are built. Temperature distribution of the photodiode irradiated by the 1064 nm millisecond multi-pulsed laser is simulated by the finite element software COMSOL Multiphysics. Results show that when the pulse number N of the multi-pulsed laser irradiation is 1, 3, 5, 10, 30, respectively, pulse energy density region required by the fusion damage threshold of the photodiode is 19.1-76.4 J/cm^2 . The research results are helpful for the millisecond multi- pulsed laser in laser processing and the application of laser protection.