应用反应离子刻蚀技术的静电纺纳米纤维阵列制备

Preparation of electrospun nanofiber arrays by reactive ion etching

为开发一种简便、高效制备功能纳米纤维阵列的方法,结合静电纺丝和反应离子刻蚀技术制备了有序纳米纤维阵列。研究了纤维膜厚度、掩膜尺寸对形成纤维阵列微结构的影响,初步考察了纤维阵列作为细胞培养基底的生物相容性。研究结果表明:以铜网为掩膜,用氧等离子体刻蚀聚苯乙烯纳米纤维膜,制备了有序的纳米纤维阵列;纤维阵列的结构和尺寸可调,当刻蚀经30 min和120 min静电纺丝制备的纤维膜时,分别形成了二维有序网格阵列和三维鸟巢结构;在形成的三维纤维结构上培养成纤维细胞(NIH3T3)发现,细胞在三维纤维基底上容易贴壁、生长,纤维阵列具有高的生物相容性。

In order to develop a simple and efficient method for preparing functional nanofiber array,electrospinning and reactive ion etching were combined to prepare regular electrospun nanofiber arrays.The influence of fiber film thickness and mask size on the formed fiber microstructures,as well as the biocompatibility of the fiber arrays as the cell culture substrate were investigated.The results show that highly ordered nanofiber arrays are produced by O2 reactive ion etching electrospun nanofiber films with copper grid as the mask.The size and structure of the fiber arrays can be controlled.Two dimensional uniform net-like arrays and three dimensional bird-nest-like fiber arrays formed,respectively,while the fiber films prepared by electrospinning for 30 min and 120 min are etched.NIH3T3 cell culture experiments suggest that cells have good adhesion and growth on the three dimensional fiber substrate,which indicates the produced fiber array has high biocompatibility.