大功率IGBT5模块开关特性研究

Research on Switching Behavior of High Power IGBT5 Module

为在实际工程应用中实现更高系统功率密度输出和可靠性要求,基于器件测试平台,对IGBT5大功率芯片P5的开关特性进行了研究,分析了其开通、关断过程随门极电阻、驱动电压、结温等外部应用条件变化的规律,研究了异常短路条件下其开关特性,并对开关异常现象从半导体原理上进行解释和说明。

It investigated the switching characteristics of IGBT5 P5 chip for the requirement of higher power density output and high reliability in practical application. From test bench of component level, it was further analyzed how to influence the turn-on and turn-off process by external parameters like gate resistor, gate voltage and junction temperature, short pulse etc. The abnormal switching phenomena during test were explained from the view of semiconductor mechanism. It is obviously concluded to be the strong robustness and high stability of IGBT5 switching characteristic during normal and abnormal condition.