感应耦合等离子体干法刻蚀中光刻胶异常变性的改善

Improvement of photoresist abnormal degeneration in inductively coupled plasma etch

通过不同感应耦合等离子体刻蚀条件下进行的玻璃基板发生光刻胶变性的位置,研究光刻胶变性与下部电极结构的相关性。研究结果表明:下部电极的Dam区对玻璃基板的冷却效果较差,导致该区域的玻璃基板上光刻胶容易产生变性。经过对下部电极Dam区的改造可以有效增大玻璃基板的冷却范围,改善光刻胶变性残留问题。

Comparing with the degenerated map of photoresist with substrate under different condition of inductively coupled plasma（ICP）etch recipe,this article explored the relationship between the degeneration of photoresist and the structure of electrode.Research results showed that the edge of electrode,which we called Dam Area,has poor cooling performance,thus leading to much more possibility of degeneration.We also developed an optimized Dam structure of electrode that can be used to enhance the cooling performance of the substrate,and solved the degeneration issue.