低压热丝化学气相沉积法快速合成1-2层石墨烯薄膜

Rapid synthesis of graphene film with 1-2 layers on Ni substrate by LPHFCVD

利用镍衬底独特的渗碳-析碳机制,分别引入混合气体氢气和乙炔,使用低压热丝化学气相沉积法(LPHFCVD),在镍衬底上生长石墨烯(Graphene)薄膜。通气时长分别为5s,60s,300s,极大地节省了时间和成本。制备的样品分别通过拉曼光谱(Raman),X光电子能谱(XPS),扫描电镜(SEM)等分析表征手段对其结构、形貌、缺陷等进行表征。拉曼光谱表明石墨烯薄膜的D,G,2D峰在不同温度、不同反应时间条件下不同的层数、缺陷密度和结晶质量,其中以950℃,5s的条件制备得到的石墨烯薄膜为1-2层,且缺陷极少,结晶质量很高。XPS的结果进一步确认了按照以上条件制备的石墨烯薄膜具有很高的结晶质量和很低的缺陷密度。SEM则显示了在镍衬底上制备石墨烯薄膜的形貌。

Graphene is grown on the Ni substrate using its unique carburizing-precipitation mechanism by pumping in the mixture gas of H2 and C2H2 in the CVD reaction chamber of low pressure hot filament. It takes the ventilation time of 5 seconds, 1 rain and 5 minutes, respectively, which greatly saves time and cost. The graphene samples prepared have been characterized by the Raman characteristic spectra, X-Ray Photoelectron spectra （XPS） and the scanning electron microscope （SEM）. Raman scatting spectra shows that the D, G, 2D peaks of graphene present different situation under different temperature, and reaction time, which reflects the preparation of graphene film at 950℃ for 5s with 1 - 2 layers and few defects. The XPS results further con- firm that the prepared graphene has the highly crystal quality and low defect concentration. The SEM of the sample shows the shape of the graphene film based on the growth of nickel substrate.