摘要
共面波导因其优越的性能,在毫米波电路设计中得到广泛应用。本文提出了一种基于工艺和物理尺寸参数的,综合考虑各种高频寄生效应,针对不同结构共面波导的统一物理模型。该模型包括由R-L阶梯组成的串联部分和由电容、C-R-C支路和C-L-R支路组成的并联部分。基于UMC 65 nm CMOS工艺设计和测试了3种不同结构的共面波导,结果显示所建立的模型仿真得到的S参数和特征参数与测试结果相吻合。
Coplanar waveguides (CPW) are widely used in mm-wave circuits deigns for their good performance. A unified physics-based model for CPW with different shield structures is presented which takes different high frequency parasitic effects into account. This model consists of a series branch of R- L ladder and a parallel branch which is a combination of a capacitor, a C-R-C network and a C-L-R network. These CPWs are fabricated in UMC 65nm CMOS process and then measured. Excellent agreement of S parameter and characteristic parameters between measured data and model simulated data are achieved.
出处
《电子设计工程》
2017年第8期87-91,共5页
Electronic Design Engineering
关键词
CMOS
共面波导
统一物理模型
高频寄生效应
CMOS
coplanar waveguide
physics-based unified model
high frequency parasitic effects