Ag/TiO_2/ITO紫外探测器的制备及其光电性能

Preparation of Ag/TiO_2/ITO UV Detector and Its Photoelectronic Properties

采用胶体晶体模板技术,结合磁控溅射工艺,制备出光电性能较为优异的Ag反点阵列/TiO_2/ITO三明治结构紫外探测器。通过扫描电子显微镜(SEM)、XRD、四探针测试仪及半导体参数测试仪对探测器的微观结构和光电性能进行了测试与表征。结果表明:反点阵列孔径对探测器光电性能影响较为显著;随着孔径增大,探测器的暗电流逐渐增大,光电流先增大后减小,响应时间逐渐延长;孔径为4.2μm时,探测器的光电性能达到最佳;孔径较大的反点阵列电极,具有较高的电导率、较低的紫外光透过率以及较大的光生电子-空穴的复合概率。

TiO2-based UV detectors with Ag antidot/TiO2/ITO sandwich structure were prepared by RF magnetron sputtering and col-loidal crystal template technology. The microstructure and photoelectronic properties of the UV detectors were investigated by SEM, XRD, four point probe and semiconductor parameter instrument. The experimental results show that pore size of Ag antidot has an obvi-ous effect on the photoelectronic properties of the detectors. With the increase of pore size, the dark current increases and the response time is prolonged, while the photocurrent is increased at first, then is decreased. Meanwhile, it is found that photoelectronic properties are optimum when the pore size is 4. 2 μm. Antidot array electrodes with large pore size possess higher electrical conductivity, lower ultraviolet transmittance and higher recombination probability of electron-hole pair. Therefore, the pore size variation exhibits signifi-cant effluence on the photoelectronic properties of the UV detector.