摘要
We present a first-principles study of the structural,dielectric,and lattice dynamical properties for chalcopyrite semiconductor ZnSnP2.The structural properties are calculated using a plane-wave pseudopotential method of densityfunctional theory.A linear response theory is used to derive Born effective charge tensors for each atom,dielectric constants in low and high frequency limits,and phonon frequencies.We calculate all zone-center phonon modes,identify Raman and infrared active modes,and report LO-TO splitting of the infrared modes.The results show an excellent agreement with experiment and propose several predictive behaviors.
We present a first-principles study of the structural,dielectric,and lattice dynamical properties for chalcopyrite semiconductor ZnSnP_2.The structural properties are calculated using a plane-wave pseudopotential method of densityfunctional theory.A linear response theory is used to derive Born effective charge tensors for each atom,dielectric constants in low and high frequency limits,and phonon frequencies.We calculate all zone-center phonon modes,identify Raman and infrared active modes,and report LO-TO splitting of the infrared modes.The results show an excellent agreement with experiment and propose several predictive behaviors.
基金
Project supported by the Open Research Fund of Computational Physics Key Laboratory of Sichuan Province,Yibin University(Grant No.JSWL2014KFZ01)
the Scientific Research Fund of Sichuan Provincial Education Department,China(Grant No.16ZB0209)
the Scientific Research Foundation of Chengdu University of Information Technology,China(Grant No.J201611)
the National Natural Science Foundation of China(Grant No.11547224)
