摘要
In this work,the electronic transport properties of Z-shaped silicene nanoribbon（ZsSiNR） structure are investigated.The calculations are based on the tight-binding model and Green＇s function method in Landauer-Biittiker formalism,in which the electronic density of states（DOS）,transmission probability,and current-voltage characteristics of the system are calculated,numerically.It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system.It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction（SOI） strength.Also,the semiconductor to metallic transition occurs by increasing the SOI strength.The present theoretical results may be useful to design silicene-based devices in nanoelectronics.
In this work,the electronic transport properties of Z-shaped silicene nanoribbon（ZsSiNR） structure are investigated.The calculations are based on the tight-binding model and Green＇s function method in Landauer-Biittiker formalism,in which the electronic density of states（DOS）,transmission probability,and current-voltage characteristics of the system are calculated,numerically.It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system.It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction（SOI） strength.Also,the semiconductor to metallic transition occurs by increasing the SOI strength.The present theoretical results may be useful to design silicene-based devices in nanoelectronics.
基金
Project supported by the Sari Branch,Islamic Azad University,Iran Grant No.1-24850
